Study of efficiency droop and carrier localisation in an InGaN/GaN quantum well structure

被引：16

作者：

Hammersley, S. ^{[1
]}

Badcock, T. J. ^{[1
]}

Watson-Parris, D. ^{[1
]}

Godfrey, M. J. ^{[1
]}

Dawson, P. ^{[1
]}

Kappers, M. J. ^{[2
]}

Humphreys, C. J. ^{[2
]}

机构：

[1] Univ Manchester, Sch Phys & Astron, Photon Sci Inst, Alan Turing Bldg, Manchester M13 9PL, Lancs, England

[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 | 2011年 / 8卷 / 7-8期

基金：

英国工程与自然科学研究理事会;

关键词：

efficiency; droop; InGaN; quantum well; TEMPERATURE; ORIGIN;

D O I：

10.1002/pssc.201001001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It is well known that the efficiency of InGaN LEDs reduces significantly at high injection currents. To date there have been several explanations for this phenomena, although no consensus has emerged as to the controlling mechanism(s). In this paper we report on the temperature dependence of the photoluminescence emission from an InGaN/GaN quantum well structure as a function of excitation level. We have observed a reduction in the S-shape temperature dependence of the peak of the emission spectrum at an excitation level that coincides with the onset of the efficiency droop. We suggest that both the efficiency droop and the reduction in the observed S-shape temperature dependence are caused by saturation of the available localised states within the quantum well. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

收藏

页码：2194 / 2196

页数：3

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