Effects of buffer layer thickness and strain on the dielectric properties of epitaxial SrTiO3 thin films

The dielectric behavior of SrTiO3 (STO) thin films grown epitaxially on different substrates using pulsed laser ablation is reported in this article. The thickness of the SrRuO3 buffer layer, serving as an electrode, was varied from 500 to 5000 Angstrom, to study the dependence of dielectric properties of the STO films on the buffer layer thickness. Strains introduced during the high-temperature deposition of these films, seem to greatly influence the dielectric behavior observed in them in the form of loss peaks. This article also reports the results of tunability and the results of dielectric measurements are correlated to the strain in the films. (C) 2002 American Institute of Physics.