Synthesis and properties of CaCd2Sb2 and EuCd2Sb2

被引:65
作者
Zhang, Hui [1 ]
Fang, Liang
Tang, Mei-Bo [1 ]
Chen, Hao-Hong [1 ]
Yang, Xin-Xin [1 ]
Guo, Xiangxin [1 ]
Zhao, Jing-Tai [1 ]
Grin, Yuri [2 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Transparent Optofunct Inorgan Mat, Shanghai 200050, Peoples R China
[2] Max Planck Inst Chem Phys Solid, D-01187 Dresden, Germany
关键词
Rare-earth intermetallics; Electrical resistance and other electrical properties; Thermoelectric properties; Magnetic properties; THERMOELECTRIC PROPERTIES; CRYSTAL-STRUCTURE; ZINTL PHASES; ZN; EU; YB;
D O I
10.1016/j.intermet.2009.07.011
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
High density polycrystalline CaCd2Sb2 and EuCd2Sb2 intermetallics are synthesized by Spark Plasma Sintering and their thermoelectric properties are investigated. X-ray diffraction measurements reveal both materials have a structure in R (3) over barm space group, containing a small amount of CdSb as a second phase. Thermoelectric measurements indicate both are p-type conductive materials. The figure of merit value of CaCd2Sb2 is 0.04 at 600 K and that of EuCd2Sb2 is 0.60 at 617 K. Theoretical calculations show that CaCd2Sb2 is a degenerate semiconductor with a band gap of 0.63 eV, while EuCd2Sb2 is metallic with DOS of 13.02 electrons/eV. For deeper understanding of the better thermoelectric properties of EuCd2Sb2, its low temperature magnetic, transport and heat capacity properties are investigated. Its Neel temperature is 7.22 K, convinced by heat capacity anomaly at 7.13 K. Hall effect convinced that it is a p-type conductive material. It has high Hall coefficient, high carrier concentration and high carrier mobility of + 1.426 cm(3)/C, 4.38 x 10(18)/cm(3) and 182.40 cm(2)/Vs, respectively. They are all in the magnitude of good thermoelectric materials. The Eu 4f level around Fermi energy and antiferromagnetic order may count for the better thermoelectric properties of EuCd2Sb2 than that of CaCd2Sb2. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码:193 / 198
页数:6
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