Plasmon excitation in vanadium dioxide films

被引：27

作者：

Felde, B ^{[1
]}

Niessner, W ^{[1
]}

Schalch, D ^{[1
]}

Scharmann, A ^{[1
]}

Werling, M ^{[1
]}

机构：

[1] UNIV GIESSEN,INST PHYS 1,D-35392 GIESSEN,GERMANY

来源：

THIN SOLID FILMS | 1997年 / 305卷 / 1-2期

关键词：

vanadium dioxide; plasmons;

D O I：

10.1016/S0040-6090(97)00148-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermochromic vanadium dioxide (VO2) films, which are considered as intelligent window coatings, have been deposited in mixed argon/oxygen atmospheres. The properties of the films have been studied by electron energy loss spectroscopy (EELS) and ultraviolet-excited photoelectron spectrometry (UPS) at different temperatures in order to get a better understanding of the physics of the metal-semiconductor transition in thin polycrystalline VO2 films. The present article mainly discusses plasmon excitation, which is found at an electron energy loss of 1.2 eV, both in the semiconducting and the metallic phase. This is in contrast to results from a single crystalline material. (C) 1997 Elsevier Science S.A.

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收藏

页码：61 / 65

页数：5

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