Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature

被引：114

作者：

Chen, L. ^{[1
]}

Yan, S. ^{[1
]}

Xu, P. F. ^{[1
]}

Lu, J. ^{[1
]}

Wang, W. Z. ^{[1
]}

Deng, J. J. ^{[1
]}

Qian, X. ^{[1
]}

Ji, Y. ^{[1
]}

Zhao, J. H. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 18期

基金：

中国国家自然科学基金;

关键词：

annealing; Curie temperature; doping profiles; electrical resistivity; ferromagnetic materials; gallium arsenide; gallium compounds; galvanomagnetic effects; hopping conduction; III-V semiconductors; manganese compounds; semiconductor doping; semiconductor thin films; semimagnetic semiconductors; SEMICONDUCTORS;

D O I：

10.1063/1.3259821

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the low-temperature magnetotransport behaviors of (Ga,Mn)As films with the nominal Mn concentration x larger than 10%. The ferromagnetic transition temperature T-C can be enhanced to 191 K after postgrowth annealing (Ga,Mn)As with x=20%. The temperature T-m, corresponding to the resistivity minimum in the curve of resistivity versus temperature at temperature below T-C, depends on Mn concentration, annealing condition, and magnetic field. Moreover, we find that the variable-range hopping may be the main conductive mechanism when temperature is lower than T-m.

引用

页数：3

共 20 条

[1] Properties of Ga1-xMnxAs with high Mn composition (x>0.1) [J].