Electronic structure in the band gap of lightly doped SrTiO3 by high-resolution x-ray absorption spectroscopy

被引：71

作者：

Higuchi, T ^{[1
]}

Tsukamoto, T

Kobayashi, K

Ishiwata, Y

Fujisawa, M

Yokoya, T

Yamaguchi, S

Shin, S

机构：

[1] Sci Univ Tokyo, Dept Appl Phys, Shinjuku Ku, Tokyo 1620825, Japan

[2] Natl Inst Mat & Chem Res, Tsukuba, Ibaraki 3058565, Japan

[3] Univ Tokyo, Inst Solid State Phys, Minato Ku, Tokyo 1068666, Japan

[4] Nagoya Inst Technol, Dept Mat Sci & Engn, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.61.12860

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure of lightly Nb-doped SrTiO3 has been investigated using high resolution x-ray absorption spectroscopy (XAS). Below the O 1s threshold, XAS spectra show two features due to empty stales whose energy positions match with those of the 3d photoemission spectra in the band gap energy region of the parent undoped SrTiO3. Similar features are also observed in lightly La-doped SrTiO3. These features exhibit systematic temperature dependence, which is well explained by the Fermi-Dirac distribution function. This indicates that the two features in the band gap are real bulk states such as simple donor states.

引用

页码：12860 / 12863

页数：4

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