Single-electron detector and counter

被引：21

作者：

Stone, NJ ^{[1
]}

Ahmed, H ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 05期

关键词：

D O I：

10.1063/1.127105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An electron detector, constructed with highly doped silicon nanowires, is described. It is shown that, at a temperature of 4.2 K, the presence or absence of a single excess electron on a storage node can be recognized. The detector can also be used to count the precise number of electrons transferred to the node. (C) 2000 American Institute of Physics. [S0003-6951(00)01031-7].

引用

页码：744 / 746

页数：3

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