Assembly of metal nanoparticles into nanogaps

被引:105
作者
Barsotti, Robert J., Jr.
Vahey, Michael D.
Wartena, Ryan
Chiang, Yet-Ming
Voldman, Joel
Stellacci, Francesco
机构
[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
[2] MIT, Dept Elect Engn & Comp Sci, Elect Res Lab, Cambridge, MA 02139 USA
关键词
dielectrophoresis; nanoelectronics; nanoparticles; nanotechnology; self-assembly;
D O I
10.1002/smll.200600334
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The directed assembly of nanoparticles and nanoscale materials onto specific locations of a surface is one of the major challenges in nanotechnology. Here we present a simple and scalable method and model for the assembly of nanoparticles in between electrical leads. Gold nanoparticles, 20 nm in diameter, were assembled inside electrical gaps ranging from 15 to 150 nm with the use of positive ac dielectrophoresis. In this method, an alternating current is used to create a gradient of electrical field that attracts particles in between the two leads used to create the potential. Assembly is achieved when dielectrophoretic forces exceed thermal and electrostatic forces; the use of anchoring molecules, present in the gap, improves the final assembly stability. We demonstrate with both experiment and theory that nanoparticle assembly inside the gap is controlled by the applied voltage and the gap size. Experimental evidence and modeling suggest that a gap-size-dependent threshold voltage must be overcome before particle assembly is realized. Assembly results as a function of frequency and time are also presented. Assembly of fewer than 10 isolated particles in a gap is demonstrated. Preliminary electrical characterization reveals that stable conductance of the assembled particles can be achieved.
引用
收藏
页码:488 / 499
页数:12
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