Visible emission from electroluminescent devices using an amorphous AlN:Er3+ thin-film phosphor

被引：64

作者：

Dimitrova, VI ^{[1
]}

Van Patten, PG

Richardson, HH

Kordesch, ME

机构：

[1] Ohio Univ, Clippinger Labs, Condensed Matter & Surface Sci Program, Athens, OH 45701 USA

[2] Univ Rousse, Dept Phys, Rousse 7017, Bulgaria

[3] Ohio Univ, Clippinger Labs, Dept Chem, Athens, OH 45701 USA

[4] Ohio Univ, Clippinger Labs, Dept Biochem, Athens, OH 45701 USA

[5] Ohio Univ, Clippinger Labs, Dept Phys, Athens, OH 45701 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 04期

关键词：

D O I：

10.1063/1.127016

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electroluminescence (EL) studies of AlN:Er alternating-current thin-film electroluminescent (ACTFEL) devices were performed at 300 K. Thin films of Er-doped AlN, similar to 200 nm thick, were grown on indium-tin-oxide/aluminum-titanium-oxide/glass substrates using rf magnetron sputtering in a nitrogen atmosphere. The turn-on voltage was found to be around 70-80 and 100 V for ACTFEL devices without and with a top insulator layer. Sharp emission lines in the visible region were observed which correspond to known transitions of the Er3+ ion. Temperature-dependent cathodoluminescence studies corroborate the EL results, and show that optimum device performance is attained near 300 K. (C) 2000 American Institute of Physics. [S0003- 6951(00)01630-2].

引用

页码：478 / 479

页数：2

共 12 条

[1] Display applications of rare-earth-doped materials [J].

Ballato, J ;

Lewis, JS ;

Holloway, P .

MRS BULLETIN, 1999, 24 (09) :51-56

[2] Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates [J].

Birkhahn, R ;

Garter, M ;

Steckl, AJ .

APPLIED PHYSICS LETTERS, 1999, 74 (15) :2161-2163

[3] Visible cathodoluminescence of Er-doped amorphous AlN thin films [J].

Gurumurugan, K ;

Chen, H ;

Harp, GR ;

Jadwisienczak, WM ;

Lozykowski, HJ .

APPLIED PHYSICS LETTERS, 1999, 74 (20) :3008-3010

[4] Low-voltage GaN:Er green electroluminescent devices [J].

Heikenfeld, J ;

Lee, DS ;

Garter, M ;

Birkhahn, R ;

Steckl, AJ .

APPLIED PHYSICS LETTERS, 2000, 76 (11) :1365-1367

[5]

HEIKENFELD J, 2000, APPL PHYS LETT, V73, P2450

[6] Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN [J].

Kim, S ;

Rhee, SJ ;

Turnbull, DA ;

Li, X ;

Coleman, JJ ;

Bishop, SG ;

Klein, PB .

APPLIED PHYSICS LETTERS, 1997, 71 (18) :2662-2664

[7] Voltage-controlled yellow or orange emission from GaN codoped with Er and Eu [J].

Lee, DS ;

Heikenfeld, J ;

Birkhahn, R ;

Garter, M ;

Lee, BK ;

Steckl, AJ .

APPLIED PHYSICS LETTERS, 2000, 76 (12) :1525-1527

[8] Visible cathodoluminescence of GaN doped with Dy, Er, and Tm [J].

Lozykowski, HJ ;

Jadwisienczak, WM ;

Brown, I .

APPLIED PHYSICS LETTERS, 1999, 74 (08) :1129-1131

[9] Photoluminescence and cathodoluminescence of GaN doped with Tb [J].

Lozykowski, HJ ;

Jadwisienczak, WM ;

Brown, I .

APPLIED PHYSICS LETTERS, 2000, 76 (07) :861-863

[10]

Ono Y.A., 1995, ELECTROLUMINESCENT D

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