Solution-based processing of the phase-change material KSb5S8

被引:29
作者
Mitzi, David B.
Raoux, Simone
Schrott, Alex G.
Copel, Matthew
Kellock, Andrew
Jordan-Sweet, Jean
机构
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
[2] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA
关键词
D O I
10.1021/cm0619510
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A hydrazine-based process for solution-depositing phase-change materials (PCMs) is demonstrated, using KSb5S8 (KSS) as an example. The process involves dissolving the elemental metals and chalcogen in hydrazine at room temperature and spin-coating the solution onto a substrate, followed by a short low-temperature (T <= 250 degrees C) anneal. The spin-coated KSS films, which range in thickness from 10 to 90 nm, are examined using variable temperature X-ray diffraction, medium energy ion scattering (MEIS), Rutherford backscattering spectroscopy (RBS), and scanning electron microscopy (SEM). The spin-coated KSS films exhibit a reversible amorphous-crystalline transition with a relatively high crystallization temperature (similar to 280 degrees C). Selected other chalcogenide-based PCMs are also expected to be suitable for thin-film deposition using this approach.
引用
收藏
页码:6278 / 6282
页数:5
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