Phonon-enhanced intraband transitions in InAs self-assembled quantum dots

被引：12

作者：

Baranov, AV

Davydov, V

Ren, HW

Sugou, S

Masumoto, Y

机构：

[1] JST, ERATO, Single Quantum Dot Project, Tsukuba, Ibaraki 3002635, Japan

[2] NEC Corp Ltd, Optoelect Res Lab, Tsukuba, Ibaraki 3058501, Japan

[3] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 3058571, Japan

来源：

JOURNAL OF LUMINESCENCE | 2000年 / 87-9卷

关键词：

InAs; quantum dots; phonon; carrier relaxation;

D O I：

10.1016/S0022-2313(99)00225-2

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Phonon-mediated intraband carrier relaxation was studied in InAs/GaAs self-assembled quantum dots (QDs) by combining resonant photoluminescence and photoluminescence excitation experiments with high spectral resolution. The phonon-related resonances were found to dominate both the luminescence and excitation spectra. Spectral widths of 1LO-phonon peaks are surprisingly small and comparable with the inverse lifetime of the LO phonons in QDs, whereas, the multiphonon resonances are much broader most likely reflecting the width of n-phonon density of states. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：503 / 505

页数：3

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