Linearity of low microwave noise AlGaN/GaN HEMTs

被引：15

作者：

Moon, JS ^{[1
]}

Micovic, M ^{[1
]}

Kurdoghlian, A ^{[1
]}

Janke, P ^{[1
]}

Hashimoto, P ^{[1
]}

Wong, WS ^{[1
]}

McCray, L ^{[1
]}

机构：

[1] HRL Labs LLC, Malibu, CA 90265 USA

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 22期

关键词：

D O I：

10.1049/el:20020920

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The linearity of low microwave noise AlGaN/GaN HEMTs was evaluated with two-tone excitation measurements at optimum low noise biases. A 0.15 x 100 mum(2) device yields an output third-order intercept point (OIP3) of 23 dBm at V-ds = 3V, and V-gs = -5V, where a noise figure (NF) of 1.0 and 1.75 dB was obtained at 10 and 20 GHz, respectively. The C/IM3, linearity figure-of-merit under the large RF signals, saturates near -28 dBc as V-ds becomes greater than the knee voltage. Both applied bias and gate periphery dependence of the linearity were evaluated. Realisation of highly linear low-noise GaN HEMTs is feasible.

引用

页码：1358 / 1359

页数：2

共 5 条

[1] High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates [J].