DC-110-GHz MMIC traveling-wave switch

被引：37

作者：

Mizutani, H ^{[1
]}

Takayama, Y

机构：

[1] NEC Corp Ltd, C&C LSI Dev Div, Kawasaki, Kanagawa 2118666, Japan

[2] NEC Corp Ltd, Semicond Grp, Kawasaki, Kanagawa 2118666, Japan

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2000年 / 48卷 / 05期

关键词：

distributed FET; millimeter-wave; MMIC switch; modeling; nonlinear circuit; traveling wave;

D O I：

10.1109/22.841881

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the broadest band monolithic-microwave integrated-circuit traveling-wave switch ever reported for millimeter-wave applications, The developed switch with the novel structure of a 400-mu m-gate finger field-effect transistor (FET) indicated an insertion loss of less than 2.55 dB and an isolation of better than 22.2 dB from de to 110 GHz, Also, the switch indicated no degradation of an insertion loss and an ON/OFF ratio of more than 22.7 dB up to an input power of 26.5 dBm at 40 GHz, Circuit analytical results based on a lossy transmission-line model for small-signal performance and circuit simulation results using the two-terminal nonlinear FET model for large-signal operation successfully showed good agreement with the experimental results.

引用

页码：840 / 845

页数：6

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