Combinatorial laser MBE synthesis of 3d ion doped epitaxial ZnO thin films

被引：106

作者：

Jin, ZW

Murakami, M

Fukumura, T

Matsumoto, Y

Ohtomo, A

Kawasaki, M

Koinuma, H

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] Tokyo Inst Technol, Ceram Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[3] Japan Sci & Technol Corp, CREST, Shinjuku Ku, Tokyo 1690072, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷

基金：

日本学术振兴会;

关键词：

combinatorial synthesis; zinc oxide; diluted magnetic semiconductors; transition metal oxide; solubility; transmission spectra;

D O I：

10.1016/S0022-0248(00)00058-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Combinatorial laser MBE (CLMBE) method was employed to fabricate epitaxial ZnO thin films doped with all the 3d transition metal ions, The solubility behavior of 3d ions was studied from the viewpoints of ionic radius and valence state. Transmission spectra were classified into four groups with respect to the absorption edge shifts and d-d electron transitions. Mn2+ and Co2+ ions show very high solubility limits among all the 3d ion species and have high spin electron configurations in ZaO matrix. Such a high throughput synthesis tool as CLMBE is shown to be a powerful tool for exploring novel functionality of thin film materials. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：55 / 58

页数：4

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