A Raman measurement of cation disorder in YBa2Cu3O7-x thin films

被引:34
作者
Gibson, G
Cohen, LF
Humphreys, RG
MacManus-Driscoll, JL
机构
[1] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2BP, England
[2] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2BZ, England
来源
PHYSICA C | 2000年 / 333卷 / 3-4期
关键词
Raman scattering; cation disorder; XRD;
D O I
10.1016/S0921-4534(00)00093-9
中图分类号
O59 [应用物理学];
学科分类号
摘要
X-ray diffraction (XRD) and Raman microscopy were used to probe cation disorder within a series of epitaxial c-axis YBa2Cu3O7-x (YBCO) thin films grown at different temperatures to give different c parameters. The Raman intensity ratio (585)/(340) is found to correlate with X-ray intensity ratio (005)/(006) (which is known to measure cation disorder). The Raman method has the following advantages compared to the X-ray method: (1) local information can be obtained with a spatial resolution of better than 1 mu m and (2) changes in oxygen content do not affect the Raman method. However, as the X-ray technique gives global measurements and as Raman is a near surface technique, the two techniques are complementary, We have also shown that cation disorder is inhomogeneous across a film surface and that this increases the non-uniform strain within the material. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:139 / 145
页数:7
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