D-band MMIC LNAs with 12 dB gain at 155 GHz fabricated on a high yield InP HEMT MMIC production process

被引：18

作者：

Lai, R

Wang, H

Chen, YC

Block, T

Liu, PH

Streit, DC

Tran, D

Siegel, P

Barsky, M

Jones, W

Gaier, T

机构：

来源：

1997 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1997年

关键词：

D O I：

10.1109/ICIPRM.1997.600109

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a highly robust, high performance 0.1 mu m passivated inP HEMT MMIC process with frequency capability up to 200 GHz and beyond. This process has demonstrated consistent wafer to wafer performance as well as remarkable uniformity with a wafer average Gmp of 1100 mS/mm +/- 44 mS for more than 1000 sites tested over a 2 inch diameter wafer. We report a D-band InP HEMT MMIC LNA using this process which has demonstrated 12 dB gain at 155 GHz. This represents the highest frequency solid-state amplifier ever reported to date.

引用

页码：241 / 244

页数：4