Determination of the valence band dispersions for Bi2Se3 using angle resolved photoemission

被引：19

作者：

Greanya, VA

Tonjes, WC

Liu, R

Olson, CG

Chung, DY

Kanatzidis, MG

机构：

[1] Michigan State Univ, Dept Phys & Astron, E Lansing, MI 48824 USA

[2] Ames Lab, Ames, IA 50011 USA

[3] Iowa State Univ, Ames, IA 50011 USA

[4] Michigan State Univ, Dept Chem, E Lansing, MI 48824 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 11期

关键词：

Band structure - Electronic structure - Photoemission - Thermal conductivity;

D O I：

10.1063/1.1517748

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The valence band dispersions for Bi2Se3 have been determined using angle resolved photoelectron spectroscopy. The experimentally determined band dispersions are compared with theoretical band structure calculations. In general, good agreement between experiment and theory was found. However, energy bands in the Gamma-Z direction are significantly flatter than those predicted by theory. (C) 2002 American Institute of Physics.

引用

页码：6658 / 6661

页数：4

共 17 条

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[Anonymous], 1986, CRYSTAL STRUCTURES

[2] ELECTRICAL AND OPTICAL PROPERTIES OF SOME M2V-BN3VI-B SEMICONDUCTORS [J].