Planar rear emitter back contact silicon heterojunction solar cells

被引:18
作者
Stangl, R. [1 ]
Haschke, J. [1 ]
Bivour, M. [1 ]
Korte, L. [1 ]
Schmidt, M. [1 ]
Lips, K. [1 ]
Rech, B. [1 ]
机构
[1] Helmholtz Zentrum Berlin Mat & Energie, Abt Silizium Photovolta, D-12489 Berlin, Germany
基金
芬兰科学院;
关键词
a-Si:H; c-Si; Back contact; Heterojunction; Device simulation;
D O I
10.1016/j.solmat.2009.06.010
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
A planar rear emitter back contact silicon heterojunction (PreBC-SHJ) solar cell design is presented, which combines the advantages of different high efficiency concepts using point contacts, back contacts, and silicon heterojunctions. Electrically insulated point or stripe contacts to the solar cell absorber are embedded within a planar hydrogenated amorphous silicon emitter layer deposited at low temperature on the rear side. The new solar cell design requires less structuring and allows large structure sizes, enabling the use of low-cost patterning technologies such as inkjet printing or screen printing. By means of numerical computer simulation the efficiency potential of back contacted heterojunction solar cells is shown to exceed 24%. First PreBC-SHJ solar cells have been realized and exhibit higher short circuit currents than our state-of-the-art front contacted silicon heterojunction reference solar cells. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:1900 / 1903
页数:4
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