Effects of strain on crystallization of amorphous silicon characterized by laser Raman spectroscopy

被引:24
作者
Kimura, Y
Katoda, T
机构
[1] Department Electronic Engineering, Faculty of Engineering, University of Tokyo, Tokyo 113, 7-3-1 Hongo, Bunkyo-ku
关键词
poly-Si; crystallization strain; interface; Raman spectroscopy;
D O I
10.1016/S0169-4332(97)80184-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Solid-phase crystallization at a surface of amorphous silicon and at an interface between amorphous silicon and a substrate was studied by laser Raman spectroscopy. Amorphous silicon was deposited on a fused silica substrate by a sputtering method. The thickness of the amorphous silicon film was about 3 mu m. The samples were annealed at 700 or 1000 degrees C. Amorphous silicon crystallized faster at the surface than at the interface. The results were confirmed by characterization of the cross section bu micro Raman spectroscopy. It was found from Raman shift of the polycrystalline silicon that the effect of the strain is to suppress crystallization.
引用
收藏
页码:790 / 793
页数:4
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