Acceptor level of nitrogen in diamond and the 270-nm absorption band

被引:55
作者
Jones, R. [1 ]
Goss, J. P. [2 ]
Briddon, P. R. [2 ]
机构
[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England
[2] Newcastle Univ, Sch Elect Elect & Comp Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
关键词
SINGLE-SUBSTITUTIONAL NITROGEN; OPTICAL-ABSORPTION; CVD; LUMINESCENCE; STATES;
D O I
10.1103/PhysRevB.80.033205
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The 270-nm optical-absorption band is seen in a wide variety of diamonds but there are conflicting opinions about its relationship with the common substitutional nitrogen center. Here we use density-functional theory to show that in addition to a deep donor level, substitutional nitrogen has an acceptor level lying in the gap, which is involved in the 270 nm transition. Specifically we show that the calculated level and its stress response are consistent with those of the 270 nm defect. This indicates that substitutional nitrogen in diamond has three charge states and not two as has been commonly assumed. We also show that N-s(+) has an absorption band with a peak around 270 nm and hence can account for the lack of correlation between the 270-nm band and N-s(0) in those diamonds containing centers which compensate nitrogen. Finally, we discuss the origin of the 271-nm absorption feature and suggest that the nitrogen-hydrogen center is a strong candidate.
引用
收藏
页数:4
相关论文
共 35 条
[1]   Thermoluminescence properties of nitrogen containing chemical vapour deposited diamond films [J].
Benabdesselam, M ;
Iacconi, P ;
Butler, JE ;
Briand, D .
DIAMOND AND RELATED MATERIALS, 2001, 10 (11) :2084-2091
[2]  
BRIDDON PR, 1992, MATER SCI FORUM, V83, P457, DOI 10.4028/www.scientific.net/MSF.83-87.457
[3]   SILICON DEFECTS IN DIAMOND [J].
CLARK, CD ;
KANDA, H ;
KIFLAWI, I ;
SITTAS, G .
PHYSICAL REVIEW B, 1995, 51 (23) :16681-16688
[4]   AN ANOMALY IN THE INFRARED-ABSORPTION SPECTRUM OF SYNTHETIC DIAMOND [J].
COLLINS, AT ;
WOODS, GS .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (01) :77-83
[5]   INTERNAL STRAIN IN DIAMOND STRUCTURE ELEMENTS - A SURVEY OF THEORETICAL APPROACHES [J].
COUSINS, CSG .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (09) :1857-1872
[6]   THE JAHN-TELLER EFFECT AND VIBRONIC COUPLING AT DEEP LEVELS IN DIAMOND [J].
DAVIES, G .
REPORTS ON PROGRESS IN PHYSICS, 1981, 44 (07) :787-830
[7]  
Fritsch E, 2007, NEW DIAM FRONT C TEC, V17, P63
[8]   HYDROGEN-RELATED IR ABSORPTION IN CHEMICAL-VAPOR-DEPOSITED DIAMOND [J].
FUCHS, F ;
WILD, C ;
SCHWARZ, K ;
KOIDL, P .
DIAMOND AND RELATED MATERIALS, 1995, 4 (5-6) :652-656
[9]  
Goss JP, 2007, TOP APPL PHYS, V104, P69
[10]   Donor and acceptor states in diamond [J].
Goss, JP ;
Briddon, PR ;
Jones, R ;
Sque, S .
DIAMOND AND RELATED MATERIALS, 2004, 13 (4-8) :684-690