Structural properties of zinc oxide thin films prepared by r.f. magnetron sputtering

被引：117

作者：

Ondo-Ndong, R ^{[1
]}

Pascal-Delannoy, F ^{[1
]}

Boyer, A ^{[1
]}

Giani, A ^{[1
]}

Foucaran, A ^{[1
]}

机构：

[1] Univ Montpellier 2, CNRS, UMR 5507, Ctr Elect & Microoptoelect Montpellier, F-34095 Montpellier 05, France

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 97卷 / 01期

关键词：

ZnO; RF sputtering magnetron; piezoelectric; X-ray diffraction;

D O I：

10.1016/S0921-5107(02)00406-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO thin films were deposited on sapphire, glass and silicon substrates by r.f. magnetron sputtering using metallic zinc target. A systematic study has been made of the influence of substrate temperature on the film structural properties. They exhibited a c-axis orientation of below 0.5degrees full width at half maximum of X-ray rocking curves, an extremely high resistivity of 10(10) Omega cm and an energy gap of 3.3 eV at room temperature. It was found that a substrate temperature of 100 degreesC and target/substrate distance about 50 mm, very low gas pressures of 3.35 x 10(-3) Torr in argon and oxygen mixed gas atmosphere giving to ZnO thin films a good homogeneity and a high crystallinity. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：68 / 73

页数：6

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