Radiation damage of pi-nu GaAs structures

被引：5

作者：

Chilingarov, A

Sloan, T

机构：

[1] School of Physics and Chemistry, Lancaster University

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1997年 / 388卷 / 03期

关键词：

D O I：

10.1016/S0168-9002(97)01246-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The radiation damage of GaAs structures with a buried pi-v junction is investigated. The main degradation is a decrease in the charge collection efficiency. The effect of 3 x 10(14) cm(-2) 1 MeV neutrons is similar to that of 1.15 x 10(14) cm(-2) 24 GeV protons. The dark current after the irradiation converges to a saturation value as predicted by a model. Isothermal annealing up to 200 degrees C allows the charge collection efficiency to recover significantly.

引用

页码：395 / 398

页数：4

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