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Complete polarisation control of GaAs gain-guided top-surface emitting vertical cavity lasers

被引：32
作者：
Dowd, P
Heard, PJ
Nicholson, JA
Raddatz, L
White, IH
Penty, RV
Day, JCC
Allen, GC
Corzine, SW
Tan, MRT
机构：
[1] UNIV BRISTOL,INTERFACE ANAL CTR,BRISTOL BS2 8BS,AVON,ENGLAND
[2] HEWLETT PACKARD LABS,PALO ALTO,CA 94303
来源：
ELECTRONICS LETTERS | 1997年 / 33卷 / 15期
关键词：
vertical cavity surface emitting lasers; gallium arsenide;
D O I：
10.1049/el:19970894
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Complete polarisation control is demonstrated in circular gain-guided top-surface emitting vertical cavity lasers by etching a line near the cavity aperture. The etch orientation determines the dominant polarisation state of emission by modifying the spontaneous emission coupling into each polarisation state. This is sufficient to pin the polarisation in monomode and multimode devices.
引用
收藏
页码：1315 / 1317
页数：3
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