Multiphoton photoemission electron microscopy using femtosecond laser radiation

被引:46
作者
Fecher, GH
Schmidt, O
Hwu, Y
Schönhense, G
机构
[1] Acad Sinica, Inst Phys, Taipei 11529, Taiwan
[2] Univ Mainz, Inst Phys, D-55099 Mainz, Germany
关键词
electron microscopy; multi-photon photoemission; silicon; lead; pentacene;
D O I
10.1016/S0368-2048(02)00143-3
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
The interaction of intense, pulsed laser radiation with surfaces results in non-linear optical effects that are responsible for emission of electrons even if the photon energies are below the work function. In the present study, photoelectrons have been excited by means of femtosecond laser pulses from a frequency doubled Ti:sapphire laser with a photon energy of 3.1 W The spatial distribution of the photo emitted electrons was imaged using a photoemission electron microscope. All samples exhibit centres of enhanced second or higher order photoemission yield, so called 'hot spots'. These 'hot spots' were preferentially excited with s-polarised light. This behaviour may be explained on the basis of a microscopic model assuming localised plasmon excitations in small particles. Lead films and pentacene layers adsorbed on silicon have been studied. The photoelectron yield depends strongly on the sample topography and the polarisation of the photons. The polarisation and power dependence of the multi-photon photoemission yield were studied. Clear evidence for three-photon contributions has been found although two-photon photoemission is sufficient to overcome the surface barrier. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:77 / 87
页数:11
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