Field emission characteristics of boron carbon nitride films synthesized by plasma-assisted chemical vapor deposition

被引：48

作者：

Sugino, T ^{[1
]}

Hieda, H ^{[1
]}

机构：

[1] Osaka Univ, Dept Elect Engn, Suita, Osaka 5650871, Japan

来源：

关键词：

boron carbon nitride film; field emission characteristics; Fourier transform infrared absorption; optical band gap; plasma-assisted chemical vapor deposition; x-ray photoelectron spectroscopy;

D O I：

10.1016/S0925-9635(99)00306-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Boron carbon nitride (BCN) films have been synthesized by plasma-assisted chemical vapor deposition. Borontrichloride (BCl3), methane (CH4) and nitrogen (N-2) were used as source gases. The BCN films were characterized by transmission electron microscopic observation, transmission electron diffraction, X-ray photoelectron spectroscopy, Fourier transform infrared absorption and ultraviolet-visible transmission measurements. The BCN films produced were polycrystalline and the band gap varied from 6.0 to 3.4 eV depending on composition. It was found that the incorporation of C atoms in boron nitride (BN) films is effective in solving the problem of BN films cracking and peeling off the substrate when steeped in water. Electron emission from BCN films is initially detected with an electric field as low as 11 V/mu m. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：1233 / 1237

页数：5

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