Control of molecular excitations in nanotube-heterostructure transistors

被引:7
作者
Hyldgaard, P [1 ]
机构
[1] Chalmers Univ Technol, Dept Appl Phys, S-41296 Gothenburg, Sweden
[2] Univ Gothenburg, S-41296 Gothenburg, Sweden
来源
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | 2003年 / 23卷 / 1-2期
关键词
nanotube transistor; transport; current-induced molecular vibrations;
D O I
10.1016/S0928-4931(02)00275-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Current-induced molecular excitations play an important role in molecular-electronics devices like the resonant-tunneling nanotube-heterostructure transistor [Solid State Comm. 116 (2000) 569, Science 293 (2001) 76.]. The nonlinear transport through a resonant level stimulates local molecular vibrations because the single-electron injection modifies the chemical bonding. I report and interpret out-of-equilibrium Green-function calculations to predict the resulting current-induced molecular stimulation as a function of the excitation frequency, the applied bias, and the electrostatic-gate potential. I show that the out-of-equilibrium operating conditions voids the traditional (detailed balance) transition rules (relating spontaneous and stimulated emission/absorption). Finally, I show that the out-of-equilibrium results for the current stimulation permit a frequency-selective excitation of the nanotube vibrations. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:243 / 246
页数:4
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