(Na,K)NbO3 thin films using metal-organic chemical vapor deposition

被引：12

作者：

Cho, CR ^{[1
]}

Moon, BM

机构：

[1] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea

[2] Uppsala Univ, Dept Solid State Elect, Angstrom Lab, Uppsala, Sweden

来源：

INTEGRATED FERROELECTRICS | 2002年 / 45卷

关键词：

(Na; K )NbO3 thin film; ferroelectrics; preferential orientation; metalorganic chemical vapor deposition (MOCVD);

D O I：

10.1080/10584580190043930

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ferroelectric (Na,K)NbO3 (NKN) thin films have been synthesized using metalorganic chemical vapor deposition (MOCVD) technique for the first time. The films were deposited on various substrates in a horizontal hot-wall reactor using tetramethyl-heptanedionate (THD) precursors. Epitaxial films have been prepared on SrTiO3 (001) substrates, while nearly perfect [001]-axis oriented polycrystalline thin films have been deposited on SiO2/Si, SiNx/Si, and sapphire substrates. Electron Spectroscopy for Chemical Analysis (ESCA) analysis indicated that Na, K, Nb, and O are the primary elements present in the film. Dielectric spectroscopy for NKN films on SiO2/Si substrates showed dielectric permittivity epsilon' about 140 and loss tandelta less than 2% in the frequency range from 1 kHz to 120 kHz.

引用

页码：39 / 48

页数：10

共 11 条

[1]

Cho CR, 1999, APPL PHYS LETT, V75, P268, DOI 10.1063/1.124344

[2]

Cho CR, 2001, INTEGR FERROELECTR, V39, P1353

[3] Na0.5K0.5NbO3 thin films for voltage controlled acoustoelectric device applications [J].