Replacement of the CBD-CdS buffer and the sputtered i-ZnO layer by an ILGAR-ZnO WEL:: optimization of the WEL deposition

被引:23
作者
Bär, M
Fischer, CH
Muffler, H
Zweigart, S
Karg, F
Lux-Steiner, MC
机构
[1] Hahn Meitner Inst Berlin GmbH, Dept SE 2, D-14109 Berlin, Germany
[2] Siemens & Shell Solar GmbH, Munich, Germany
关键词
ILGAR (ion layer gas reaction); ZnO; WEL (Window extension layer); Cu(In; Ga)(S; Se)(2); buffer free; thin film solar cell;
D O I
10.1016/S0927-0248(02)00112-5
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 [动力工程及工程热物理]; 0820 [石油与天然气工程];
摘要
As shown earlier the window extension layer (WEL) concept for thin film solar cells based on chalcopyrites results in device performances exceeding those of corresponding chemical bath deposited cadmium sulfide (CBD-CdS) buffered reference cells. The WEL concept is extended and it will be demonstrated, that now a single WEL successfully replaces both, the conventional buffer and the intrinsic part of the window bi-layer usually deposited by sputtering. Thus, one part of the window is deposited directly onto the absorber by a soft process called ion layer gas reaction (ILGAR). The optimization of ILGAR-ZnO WELs on Cu(In,Ga)(S,Se)(2) absorbers with respect to the efficiencies of the completed solar cells is presented. This effort results in 'total area' efficiencies of 14.5% (best cell) which are comparable to those of devices with CBD-CdS buffer (14.7%-best cell) without any antireflecting coating. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:101 / 107
页数:7
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