Structural and electrical properties of co-sputtered fluorinated amorphous carbon film

被引:27
作者
Jung, HS [1 ]
Park, HH [1 ]
机构
[1] Yonsei Univ, Dept Ceram Engn, Seodaemoon Ku, Seoul 120749, South Korea
关键词
fluorinated amorphous carbon film; fluorine content; bonding configuration; dielectric property;
D O I
10.1016/S0040-6090(02)00802-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Fluorinated amorphous carbon (a-C:F) films were deposited by co-sputtering process using polytetrafluoroethylene and graphite targets. The deposition characteristics, bonding configuration, structure, and electrical properties of a-C:F films were investigated as a function of fluorine content in the range of 0-62 at.%. As the fluorine content increased, transformation of bonding configuration and micro-structure were observed. For the fluorine content below 22 at.%, fluorine in amorphous carbon did not significantly affect hybrid bonding configuration. However, with increasing fluorine content, C-CF, and C-F, bonds were dominated and a further increase in fluorine content resulted in the formation of C-F, and C-F, bonds and then dielectric constant decreased from 10 to 2.7. Based on these results, correlations among bonds' distribution, micro-structure and dielectric property of a-C:F films were established. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:248 / 252
页数:5
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