Magnetoelectric exchange bias systems in spintronics

被引：172

作者：

Chen, Xi ^{[1
]}

Hochstrat, Andreas ^{[1
]}

Borisov, Pavel ^{[1
]}

Kleemann, Wolfgang ^{[1
]}

机构：

[1] Univ Duisburg Gesamthsch, Angew Phys, D-47048 Duisburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 20期

关键词：

Magnetoelectric effects;

D O I：

10.1063/1.2388149

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetoelectric switching of perpendicular exchange bias is observed in a Co/Pt multilayer attached to single crystalline magnetoelectric antiferromagnetic Cr2O3(111). The exchange bias field H-EB can be set to positive or negative values by applying an electric field E-fr either parallel or antiparallel to the magnetic freezing field H-fr while cooling to below the Neel temperature. Based on this result, the antiferromagnetic spin state can be used as a medium for data storage. The authors propose magnetic random access memory cells and magnetic logic devices, which are purely voltage controlled. (c) 2006 American Institute of Physics.

引用

页数：3

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