Measurement of the excited-state lifetime of a microelectronic circuit

被引：96

作者：

Lehnert, KW ^{[1
]}

Bladh, K

Spietz, LF

Gunnarsson, D

Schuster, DI

Delsing, P

Schoelkopf, RJ

机构：

[1] Yale Univ, Dept Phys & Appl Phys, New Haven, CT 06511 USA

[2] Chalmers Univ Technol, Dept Microelect & Nanosci, Chalmers MC2, Microtechnol Ctr, SE-41296 Gothenburg, Sweden

[3] Univ Gothenburg, SE-41296 Gothenburg, Sweden

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.90.027002

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate that a continuously measured microelectronic circuit, the Cooper-pair box measured by a radio-frequency single-electron transistor, approximates a quantum two-level system. We extract the Hamiltonian of the circuit through resonant spectroscopy and measure the excited-state lifetime. The lifetime is more than 10(5) times longer than the inverse transition frequency of the two-level system, even though the measurement is active. This lifetime is also comparable to an estimate of the known upper limit, set by spontaneous emission, for this circuit.

引用

页码：4 / 027002

页数：4

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