Sulfur-doped homoepitaxial (001) diamond with n-type semiconductive properties

被引：68

作者：

Nishitani-Gamo, M

Yasu, E

Xiao, CY

Kikuchi, Y

Ushizawa, K

Sakaguchi, I

Suzuki, T

Ando, T

机构：

[1] Japan Sci & Technol Corp, JST, CREST, Tsukuba, Ibaraki 3050044, Japan

[2] Kubota Corp, Amagasaki, Hyogo 6618567, Japan

[3] Kansai Univ, High Technol Res Ctr, Suita, Osaka 5648680, Japan

来源：

关键词：

chemical vapor deposition; diamond crystal; hydrogen sulfide; sulfur doping;

D O I：

10.1016/S0925-9635(00)00218-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the growth of sulfur-doped (S-doped) diamond crystals via microwave plasma assisted chemical vapor deposition by introducing hydrogen sulfide (H2S) into the gas phase. Adding a small amount of H2S effectively improved the crystal quality, and the sulfur was successfully incorporated into the crystal. No evidence of hydrogen incorporation was observed in the crystal. The S-doped homoepitaxial (001) diamond showed n-type conduction by Hall effect measurements in the temperature range 250-550 K. The mobility of electrons at room temperature was 597 cm(2) V(-1)s(-1); this value suggests that there could be many practical uses. The crystallinity of the S-doped n-type diamond films were characterized by various techniques which demonstrated the high quality of the films. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：941 / 947

页数：7

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