Novel single-layer chemically amplified resist for 193-nm lithography

A new class of photoresistant matrix polymer based on alicyclic cyclopolymer was developed for use in ArF single-layer lithography. A novel polymer was synthesized by terpolymerization reaction between tert-butyl methacrylate and -alicyclic-maleic anhydride alternating copolymer, which has a hydroxy substituent on the alicyclic group. The polymer showed good solubility in a 2.38 wt% TMAH aqueous solution, high thermal stability up to 180 degrees C, and a good dry-etch resistance against CF4 gas (1.14 times the etching rate of novolak resist). Using an ArF excimer laser exposure system, a 0.14 mu m line and space patterns have been resolved.