Origin of the residual acceptor ground-state splitting in silicon

被引：25

作者：

Karaiskaj, D ^{[1
]}

Kirczenow, G

Thewalt, MLW

Buczko, R

Cardona, M

机构：

[1] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[3] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.90.016404

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The residual ground-state splitting of acceptors in high-quality silicon has been studied intensely by different experimental techniques for several decades. Recently, photoluminescence studies of isotopically pure silicon revealed the ground-state splitting to result from the random distribution of isotopes in natural silicon. Here we present a new model that explains these surprising experimental results, and discuss the implications for acceptor ground-state splittings observed in other isotopically mixed semiconductors, as well as for the acceptor ground state in semiconductor alloys.

引用

页数：4

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