Use of a High Electron-Affinity Molybdenum Dithiolene Complex to p-Dope Hole-Transport Layers

被引：86

作者：

Qi, Yabing ^{[1
]}

Sajoto, Tissa ^{[2
,3
]}

Barlow, Stephen ^{[2
,3
]}

Kim, Eung-Gun ^{[2
,3
]}

Bredas, Jean-Luc ^{[2
,3
]}

Marder, Seth R. ^{[2
,3
]}

Kahn, Antoine ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA

[3] Georgia Inst Technol, Ctr Organ Elect & Photon, Atlanta, GA 30332 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2009年 / 131卷 / 35期

基金：

美国国家科学基金会;

关键词：

DIODES;

D O I：

10.1021/ja904939g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Experimental and theoretical results are presented on the electronic structure of molybdenum tris[1,2-bis(trifluoromethyl) ethane-1,2-dithiolene] (Mo(tfd)(3)), a high electron-affinity organometallic complex that constitutes a promising candidate as a p-dopant for organic molecular semiconductors. The electron affinity of the compound, determined via inverse photoemission spectroscopy, is 5.6 eV, which is 0.4 eV Larger than that of the commonly used p-dopant F-4-TCNQ. The LUMO level of Mo(tfd)(3) is calculated to be delocalized over the whole molecule, which is expected to Lead to low pinning potential. Efficient p-doping of a standard hole transport material (alpha-NPD) is demonstrated via measurements of Fermi level shifts and enhanced conductivity in alpha-NPD: 1% Mo(tfd)(3). Rutherford backscattering measurements show good stability of the three-dimensional Mo(tfd)(3) molecule in the host matrix with respect to diffusion.

引用

页码：12530 / +

页数：4

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