Bipolar resistive switching in individual Au-NiO-Au segmented nanowires

被引：39

作者：

Herderick, Edward D. ^{[1
]}

Reddy, Kongara M. ^{[1
]}

Sample, Rachel N. ^{[1
]}

Draskovic, Thomas I. ^{[1
]}

Padture, Nitin P. ^{[1
]}

机构：

[1] Ohio State Univ, Dept Mat Sci & Engn, Ctr Emergent Mat, Columbus, OH 43210 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 20期

基金：

美国国家科学基金会;

关键词：

electrical resistivity; electromigration; gold; MIM structures; nanocontacts; nanowires; nickel compounds; vacancies (crystal); METAL HETEROJUNCTION NANOWIRES; RESISTANCE; FILMS; MEMORIES;

D O I：

10.1063/1.3263733

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Evidence for bipolar resistive switching is reported in individual metal-oxide-metal (MOM) nanowires in the system Au-NiO-Au, and a plausible mechanism for the same is presented. The MOM nanowire architecture may be well suited for much needed fundamental studies of resistive switching because it provides (i) high-quality end-on contacts, (ii) control over the dimensions of the oxide, (iii) ability to synthesize a very large number of nearly identical nanowires in a wide variety of MOM systems, and (iv) elimination of substrate-induced strain effects.

引用

页数：3

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