SOI bulk and surface generation properties measured with the pseudo-MOSFET

The pseudo-MOSFET (Psi-MOSFET) is an excellent test structure to characterize the quality of SOI films by measuring the generation lifetime without complicated processing steps. We use this simple structure and a modified one to determine the SOI film generation lifetime, the surface generation velocities at the upper and lower interfaces, and the effect of HF and iodine solution surface passivation and hydrogen annealing. The modified Psi-MOSFET has an additional top gate permitting independent control of top and bottom surface potentials thereby providing the ability to control surface generation through surface accumulation, depletion, or inversion.