Control of ion energy distribution at substrates during plasma processing

被引：142

作者：

Wang, SB

Wendt, AE

机构：

[1] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA

[2] Univ Wisconsin, Ctr Plasma Aided Mfg, Madison, WI 53706 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 02期

关键词：

D O I：

10.1063/1.373715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Control of ion energy distribution functions (IEDF) at the substrate during plasma processing is achieved using a specially tailored voltage waveform for substrate bias, consisting of a short voltage spike in combination with a slow ramp. A much narrower IEDF is possible compared to the conventional approach of applying a sinusoidal waveform to the substrate electrode. Measurements in a helicon plasma combined with a time-dependent spherical-shell plasma fluid model demonstrate the benefits of this method in producing a narrow IEDF of precisely controllable energy, independent of ion mass. (C) 2000 American Institute of Physics. [S0021-8979(00)03411-3].

引用

页码：643 / 646

页数：4

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