Avoided level crossing measurements of electric field enhanced diamagnetic states in gallium arsenide

被引:1
作者
Chow, KH [1 ]
Hitti, B
Eshchenko, DG
Storchak, VG
Kreitzman, SR
Brewer, JH
机构
[1] Univ Alberta, Dept Phys, Edmonton, AB T6G 2J1, Canada
[2] TRIUMF, Vancouver, BC V6T 2A3, Canada
[3] Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland
[4] Paul Scherrer Inst, CH-5231 Villigen, Switzerland
[5] Russian Acad Sci, Inst Nucl Res, Moscow 117312, Russia
[6] IV Kurchatov Atom Energy Inst, Moscow 123182, Russia
[7] Univ British Columbia, Canadian Inst Adv Res, Vancouver, BC V6T 1Z1, Canada
[8] Univ British Columbia, Dept Phys, Vancouver, BC V6T 1Z1, Canada
基金
美国国家科学基金会; 加拿大自然科学与工程研究理事会;
关键词
semiconductors; GaAs; electric field; avoided level crossing; muonium;
D O I
10.1016/S0921-4526(02)01588-0
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Recently, we started developing a new technique that makes possible spectroscopic studies of electric field enhanced diamagnetic states in semiconductors and other materials. This novel approach combines avoided level crossing with electric-field muSR. The first results, obtained in semi-insulating GaAs, are described in this paper. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:157 / 159
页数:3
相关论文
共 4 条
[1]   STRUCTURE OF NEGATIVELY CHARGED MUONIUM IN N-TYPE GAAS [J].
CHOW, KH ;
KIEFL, RF ;
MACFARLANE, WA ;
SCHNEIDER, JW ;
COOKE, DW ;
LEON, M ;
PACIOTTI, M ;
ESTLE, TL ;
HITTI, B ;
LICHTI, RL ;
COX, SFJ ;
SCHWAB, C .
PHYSICAL REVIEW B, 1995, 51 (20) :14762-14765
[2]  
Chow KH, 1998, SEMICONDUCT SEMIMET, V51, P137
[3]   Electron transport to positive centers in GaAs [J].
Eshchenko, DG ;
Storchak, VG ;
Morris, GD .
PHYSICS LETTERS A, 1999, 264 (2-3) :226-231
[4]   MUONIUM CENTERS IN GAAS AND GAP [J].
KIEFL, RF ;
SCHNEIDER, JW ;
KELLER, H ;
KUNDIG, W ;
ODERMATT, W ;
PATTERSON, BD ;
BLAZEY, KW ;
ESTLE, TL ;
RUDAZ, SL .
PHYSICAL REVIEW B, 1985, 32 (01) :530-532