Temperature dependence of the work function of ruthenium-based gate electrodes

被引：11

作者：

Alshareef, H. N.

Wen, H. C.

Luan, H. F.

Choi, K.

Harris, H. R.

Senzaki, Y.

Majhi, P.

Lee, B. H.

Foran, B.

Lian, G.

机构：

[1] SEMATECH, Austin, TX 78741 USA

[2] ATDF Inc, Austin, TX 78741 USA

来源：

THIN SOLID FILMS | 2006年 / 515卷 / 04期

关键词：

gate electrodes; work function; ruthenium; hafnium silicon oxide;

D O I：

10.1016/j.tsf.2006.03.026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of device fabrication temperature on the work function of ruthenium (Ru) metal gate and its bilayers was investigated. The work function shows strong temperature dependence when Ru electrodes are deposited on silicon oxide, SiO2, but not on hafnium silicates (HfSiOx). Specifically, the work function of Ru on SiO2 increased from 4.5 eV at 500 degrees C to 5.0 eV at 700 degrees C. On further annealing to 900 degrees C or higher, the work function dropped to about 4.4 eV. In the case of HfSiOx, the work function of Ru changed by less than 100 mV over the same temperature range. Identical temperature dependence was observed using hafnium (Hf)/Ru and tantalum (Ta)/Ru bilayers. However, the peak values of the work function decreased with increasing Hf/Ru and Ta/Ru thickness ratios. Materials analysis suggests that these trends are driven by interactions at the Ru metal gate-dielectric interface. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：1294 / 1298

页数：5

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