All-organic thin-film transistors using photoacryl as a gate insulator

In this study, we have fabricated all organic thin-film transistors using photoacryl as a dielectric layer and pentacene as a semiconductor layer. Potoacryl was spin coated and cured at 220 degreesC for I h and its breakdown field was larger than 1 MV/cm. Field effect mobility, threshold voltage, and on-off current ratio in 1.2-mum-thick gate dielectric layer were 0.039 cm(2)/V s, -7 V, and 10(6). To improve the electrical characteristics of our organic thin-film transistor, we reduced the thickness of photoacryl dielectric layer. As a result, field effect mobility, threshold voltage, and on-off current ratio in 0.6-mum-thick gate dielectric layer were 0.075 cm(2)/V s, -6 V, and 10(6), respectively. (C) 2002 Elsevier Science B.V. All rights reserved.