A precision method for laser focusing on laser beam induced current experiments

被引:15
作者
Poce-Fatou, JA [1 ]
Martín, J [1 ]
Alcántara, R [1 ]
Fernández-Lorenzo, C [1 ]
机构
[1] Fac Ciencias, Dept Quim Fis, Cadiz 11510, Spain
关键词
D O I
10.1063/1.1511794
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 [仪器科学与技术]; 080401 [精密仪器及机械]; 081102 [检测技术与自动化装置];
摘要
Using the laser beam induced current (LBIC) technique for the study of solar cells and photovoltaic devices, it is possible to obtain images representing the different degrees of quantum efficiency observed on the surface of these elements. Since the resolution of these images depends on the size of the spot used, the laser beam is directed through a focusing lens, which allows us to obtain significantly small sizes. This article puts forward a method for precise focusing of the laser beam used in the LBIC study of photovoltaic devices by analyzing line scans over sharp structures. The technique is applied to characteristic heterogeneities of solar cells such as the fingers used to collect the induced current, the grain boundaries characteristic of polycrystalline solar cells, and the small surface areas with a quantum efficiency different from that of its adjacent areas. The validity of the proposed method has been evaluated by carrying out virtual experiments where the focusing technique has been applied to heterogeneities reproducing the ones we mentioned above. A criterion for calculating the Gaussian diameter of the laser spot using LBIC signal analysis is also discussed in this work from a theoretical point of view. (C) 2002 American Institute of Physics.
引用
收藏
页码:3895 / 3900
页数:6
相关论文
共 12 条
[1]
Detection of junction failures and other defects in silicon and III-V devices using the LBIC technique in lateral configuration [J].
Acciarri, M ;
Binetti, S ;
Garavaglia, M ;
Pizzini, S .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 42 (1-3) :208-212
[2]
Advances in silicon surface characterisation using light beam injection techniques [J].
Acciarri, M ;
Pizzini, S ;
Simone, G ;
Jones, D ;
Palermo, V .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 73 (1-3) :235-239
[3]
Bouaïcha M, 1999, PHYS STATUS SOLIDI A, V175, P561, DOI 10.1002/(SICI)1521-396X(199910)175:2<561::AID-PSSA561>3.0.CO
[4]
2-N
[5]
Gerrard A., 1994, INTRO MATRIX METHODS
[6]
ELECTRICAL PROPERTIES OF DISLOCATIONS IN SILICON .I. EFFECTS ON CARRIER LIFETIME [J].
GLAENZER, RH ;
JORDAN, AG .
SOLID-STATE ELECTRONICS, 1969, 12 (04) :247-+
[7]
Lyman C., 1990, Scanning electron microscopy, X-ray microanalysis, and analytical electron microscopy: a laboratory workbook
[8]
MAPPING OF DEFECTS AND THEIR RECOMBINATION STRENGTH BY A LIGHT-BEAM-INDUCED CURRENT IN SILICON-WAFERS [J].
MARTINUZZI, S ;
STEMMER, M .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 24 (1-3) :152-158
[9]
Non-doping light impurities in silicon for solar cells [J].
Pivac, B ;
Sassella, A ;
Borghesi, A .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 36 (1-3) :55-62
[10]
Reimer L., 1998, Scanning Electron Microscopy: Physics of Image Formation and Microanalysis