β-Ga2O3 nanowires on unpatterned and patterned MgO single crystal substrates

被引:10
作者
Li, ZJ
Li, HJ
Chen, XL
Li, L
Xu, YP
Li, KZ
机构
[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
[3] Northwestern Polytech Univ, Coll Mat Sci & Engn, Xian 710072, Peoples R China
基金
中国国家自然科学基金;
关键词
oxide materials; nanostructured materials; gas-solid reaction; TEM; electron emission spectroscopy;
D O I
10.1016/S0925-8388(02)00414-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Large-scale beta-Ga2O3 nanowires and individual beta-Ga2O3 nanowires bridging adjacent metal Ag catalyst islands were synthesized on the unpatterned and patterned MgO single crystal substrates by direct reaction of gallium and water vapor. The samples were characterized by field emission scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction (XRD), transmission electron microscopy and selected area electron diffraction. The results show that the line-like nanostructures are monoclinic beta-Ga2O3 nanowires. The individual beta-Ga2O3 nanowires are rooted in the islands, and some of them bridge adjacent islands of the Ag catalyst. This work offered the prospect of developing ultrafine nanoscale devices. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:275 / 279
页数:5
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