Contrast enhancement behavior of hydrogen silsesquioxane in a salty developer

被引:27
作者
Nam, Sung-Wook [1 ]
Rooks, Michael J. [2 ]
Yang, Joel K. W. [3 ]
Berggren, Karl K. [3 ]
Kim, Hyun-Mi [1 ]
Lee, Min-Hyun [1 ]
Kim, Ki-Bum [1 ]
Sim, Jae Hwan [4 ]
Yoon, Do Yeung [4 ]
机构
[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea
[2] Yale Inst Nanosci & Quantum Engn, New Haven, CT 06520 USA
[3] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[4] Seoul Natl Univ, Dept Chem, Seoul 151742, South Korea
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 06期
关键词
electron resists; hydrogen compounds; sodium compounds; ELECTRON-BEAM RESIST; LITHOGRAPHY;
D O I
10.1116/1.3245991
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors investigated a contrast enhancement behavior of hydrogen silsesquioxane (HSQ) in a salty development system (NaOH/NaCl). Time-resolved analysis of contrast curves and line-grating patterns were carried out to investigate the unique properties of a salty development process. In NaOH developer without salt, the development process was saturated beyond a certain development time. On the other hand, the addition of salt enabled a continuous development, which was not observed in the pure NaOH development. The continuous thinning process enhances the contrast of HSQ in the salty developer, which allows a fast collapsing behavior in HSQ line-grating patterns. During development process, salt seems to have the role of modifying HSQ by breaking network bonds preferentially, leading to a continuous development rate.
引用
收藏
页码:2635 / 2639
页数:5
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