Synthesis of high-quality Al-doped ZnO nanoink

被引：31

作者：

Thu, Tran V. ^{[1
,2
]}

Maenosono, Shinya ^{[1
]}

机构：

[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan

[2] Le Quy Don Tech Univ, Fac Phys & Chem Engn, Hanoi, Vietnam

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 01期

关键词：

aluminium; annealing; crystal structure; electrical resistivity; II-VI semiconductors; nanofabrication; nanoparticles; pyrolysis; semiconductor doping; semiconductor thin films; wide band gap semiconductors; zinc compounds; ZINC-OXIDE NANOPARTICLES; OPTICAL-PROPERTIES; SPRAY-PYROLYSIS; SIZE-CONTROL; NANOCRYSTALS; VARISTOR; FILMS; PHOTOLUMINESCENCE; MICROEMULSION; TRANSISTORS;

D O I：

10.1063/1.3273501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Al-doped ZnO (AZO) nanoparticles (NPs) have been synthesized via the thermal decomposition of metal acetylacetonate precursors in a nonoxygen and nonpolar solvent. Long-chain alkyl amines have been utilized to terminate the growth of AZO NPs and to stabilize them. The NPs have been characterized by a number of techniques as monocrystalline, exhibiting a hexagonal (wurtzite) structure with sizes from 8 to 13 nm. The composition of Al in the resulting NP is related solely to the composition of the reaction mixture and the size is controllable with the temperature of the reaction. The AZO NP dispersion has been proven to be stable over a 24 h period by dynamic light scattering measurements. The influence of the synthetic conditions, such as temperature, reaction time and the Al doping content, on the properties of NPs have also been investigated. An optically transparent AZO thin film was fabricated using the AZO nanoink by spin casting followed by annealing. The resulting film resistivity was measured to be 5.0x10(-3) cm.

引用

页数：6

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