Linewidth broadening by 1/f noise in wavelength-tunable laser diodes

被引：13

作者：

Amann, MC ^{[1
]}

Hakimi, R ^{[1
]}

Borchert, B ^{[1
]}

Illek, S ^{[1
]}

机构：

[1] SIEMENS AG,CORP RES & DEV,D-81739 MUNICH,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 12期

关键词：

D O I：

10.1063/1.118603

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The excess linewidth broadening of continuously tunable InGaAsP/InP laser diodes at 1.5 mu m wavelength is investigated. Terminal electrical and FM noise measurements indicate that the recombination processes in the forward biased tuning region produce significant lif carrier noise. Below 1 MHz the 1/f noise dominates yielding a noise enhancement of about 30 dB at 1 kHz. The discrepancy observed so far between theoretically expected and measured spectral linewidth can be well resolved by taking into account this additional noise source. (C) 1997 American Institute of Physics.

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收藏

页码：1512 / 1514

页数：3

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