Direct extraction of the series equivalent circuit parameters for the small-signal model of SOI MOSFET's

被引：38

作者：

Raskin, JP

Dambrine, G

Gillon, R

机构：

[1] Laboratoire d'Hyperfréquences, Univ. Catholique de Louvain

[2] Dept. Hyperfrequences S., Inst. d'Electron. Microlectron. Nord

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1997年 / 7卷 / 12期

关键词：

FET's; MOSFET; parameter extraction; scattering parameters measurement; small-signal equivalent circuit;

D O I：

10.1109/75.645191

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new extraction scheme is proposed which allows to determine all the series equivalent circuit elements values from S-parameters measurements at a single bias point in saturation, Exploiting the specific shape of a set of impedance loci, the new scheme uses linear regression techniques to solve the extraction problem, The resulting algorithm is very simple and efficient when compared to optimizer-driven approaches.

引用

页码：408 / 410

页数：3

共 6 条

[1]

COLINGE JP, 1996, P 1996 IEEE INT SOI, P128

[2] A NEW METHOD FOR DETERMINING THE FET SMALL-SIGNAL EQUIVALENT-CIRCUIT [J].