Electrical conduction via surface-state bands

被引:39
作者
Hasegawa, S [1 ]
Tong, X [1 ]
Jiang, CS [1 ]
Nakajima, Y [1 ]
Nagao, T [1 ]
机构
[1] JAPAN SCI & TECHNOL CORP,CREST,KAWAGUCHI,SAITAMA 322,JAPAN
关键词
angle-resolved photoemission spectroscopy; silicon; surface electrical transport; surface structure; x-ray photoelectron spectroscopy;
D O I
10.1016/S0039-6028(97)00331-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We will discuss a two-dimensional electron system originating from a surface-state band and especially its electronic transport properties. We have found a surface superstructure that has a highly conductive surface-state band, the Si(111)-root 21 x root 21R +/- 10.89 structure. induced by adsorption of a 0.14-atomic-layer of Au or Ag onto a Si(111)-root 3 x root 3-Ag surface. Photoemission spectroscopies showed that this root 21 x root 21 structure had a highly dispersive surface-state band crossing over the Fermi level, while the surface space-charge layer was a depletion layer. It was then concluded that the observed excess surface conductance was due to the two-dimensional band of the surface electronic state. (C) 1997 Elsevier Science B.V.
引用
收藏
页码:322 / 327
页数:6
相关论文
共 34 条
[1]   IMAGING STANDING WAVES IN A 2-DIMENSIONAL ELECTRON-GAS [J].
CROMMIE, MF ;
LUTZ, CP ;
EIGLER, DM .
NATURE, 1993, 363 (6429) :524-527
[2]   STRUCTURE OF THE (ROOT(3)X-ROOT(3)R30-DEGREES AG/SI(111) SURFACE FROM 1ST-PRINCIPLES CALCULATIONS - REPLY [J].
DING, YG ;
CHAN, CT ;
HO, KM .
PHYSICAL REVIEW LETTERS, 1992, 69 (16) :2452-2452
[3]   STRUCTURE OF THE (SQUARE-ROOT-OF-3 X SQUARE-ROOT-OF-3)R30-DEGREES AG/SI(111) SURFACE FROM 1ST-PRINCIPLES CALCULATIONS [J].
DING, YG ;
CHAN, CT ;
HO, KM .
PHYSICAL REVIEW LETTERS, 1991, 67 (11) :1454-1457
[4]   PHOTOELECTRON-SPECTROSCOPY OF SURFACE-STATES ON SEMICONDUCTOR SURFACES [J].
HANSSON, GV ;
UHRBERG, RIG .
SURFACE SCIENCE REPORTS, 1988, 9 (5-6) :197-292
[5]  
HANSSON GV, 1991, CRIT REV SOLID STATE, V17, P133
[6]   SURFACE-STRUCTURES AND CONDUCTANCE AT INITIAL-STAGES IN EPITAXY OF METALS ON A SI(111) SURFACE [J].
HASEGAWA, S ;
INO, S .
SURFACE SCIENCE, 1993, 283 (1-3) :438-446
[7]   CORRELATION BETWEEN ATOMIC-SCALE STRUCTURES AND MACROSCOPIC ELECTRICAL-PROPERTIES OF METAL-COVERED SI(111) SURFACES [J].
HASEGAWA, S ;
INO, S .
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 1993, 7 (22) :3817-3876
[8]   SURFACE-STRUCTURES AND CONDUCTANCE AT EPITAXIAL GROWTHS OF AG AND AU ON THE SI(111) SURFACE [J].
HASEGAWA, S ;
INO, S .
PHYSICAL REVIEW LETTERS, 1992, 68 (08) :1192-1195
[9]   STRUCTURE-DEPENDENT SURFACE CONDUCTANCE AT THE INITIAL-STAGES IN METAL EPITAXY ON SI(111) SURFACES [J].
HASEGAWA, S ;
INO, S .
THIN SOLID FILMS, 1993, 228 (1-2) :113-116
[10]   ELECTRONIC-PROPERTIES OF NANOMETER-SIZE METAL-SEMICONDUCTOR POINT CONTACTS STUDIED BY STM [J].
HASEGAWA, Y ;
LYO, IW ;
AVOURIS, P .
APPLIED SURFACE SCIENCE, 1994, 76 (1-4) :347-352