A new Hollow-Cathode Magnetron source for 0.10 μm copper applications

被引：2

作者：

Ashtiani, KA ^{[1
]}

Klawuhn, E ^{[1
]}

Hayden, D ^{[1
]}

Ow, M ^{[1
]}

Levy, KB ^{[1
]}

Danek, M ^{[1
]}

机构：

[1] Novellus Syst Inc, San Jose, CA 95134 USA

来源：

PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2000年

关键词：

D O I：

10.1109/IITC.2000.854274

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new design Hollow-Cathode Magnetron (HCM) source was evaluated for 0.10 mu m copper (Cu) seed deposition applications. The new source included (i) an external Dual Coil electromagnet for plasma confinement and metal ion flux control, and (ii) an optimized DC magnetron for high plasma density operation and improved target erosion. With the modified source, highly uniform deposition of copper seed (similar to 2%, 1 sigma) was achieved on 200 mm wafers minimizing the center-to-edge variability in subsequent electrochemical copper fill (electrofill.) In addition, the high plasma density operation significantly improved conformality of the seed deposition allowing reduction of the seed field thickness from 1500 Angstrom to similar to 800 Angstrom while achieving void free electrofill of 0.10-0.13 mu m test structures.

引用

页码：37 / 39

页数：3