Nanoelectronics - New life for the 'dead layer'

被引：14

作者：

Rabe, Karin M. ^{[1
]}

机构：

[1] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA

来源：

NATURE NANOTECHNOLOGY | 2006年 / 1卷 / 03期

关键词：

D O I：

10.1038/nnano.2006.162

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thin-film capacitors do not perform as well as electrostatic theory predicts. New atomistic calculations show that the culprit isn't defects in the film, but poor screening in the metal electrodes.

引用

页码：171 / U4

页数：3

共 10 条

[1] THERMODYNAMIC STABILITY OF THIN FERROELECTRIC FILMS [J].

BATRA, IP ;

SILVERMAN, BD .

SOLID STATE COMMUNICATIONS, 1972, 11 (01) :291-+

[2] Depolarization corrections to the coercive field in thin-film ferroelectrics [J].

Dawber, M ;

Chandra, P ;

Littlewood, PB ;

Scott, JF .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (24) :L393-L398

[3] Ionic polarizability of conductive metal oxides and critical thickness for ferroelectricity in BaTiO3 [J].

Gerra, G ;

Tagantsev, AK ;

Setter, N ;

Parlinski, K .

PHYSICAL REVIEW LETTERS, 2006, 96 (10)

[4] Microscopic model of ferroelectricity in stress-free PbTiO3 ultrathin films [J].

Ghosez, P ;

Rabe, KM .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2767-2769

[5] Theory of atomic-scale dielectric permittivity at insulator interfaces [J].

Giustino, F ;

Pasquarello, A .

PHYSICAL REVIEW B, 2005, 71 (14)

[6] Critical thickness for ferroelectricity in perovskite ultrathin films [J].

Junquera, J ;

Ghosez, P .

NATURE, 2003, 422 (6931) :506-509

[7] Ferroelectricity in ultrathin perovskite films [J].

Sai, N ;

Kolpak, AM ;

Rappe, AM .

PHYSICAL REVIEW B, 2005, 72 (02)

[8] First-principles approach to insulators in finite electric fields -: art. no. 117602 [J].

Souza, I ;

Iñiguez, J ;

Vanderbilt, D .

PHYSICAL REVIEW LETTERS, 2002, 89 (11)

[9]

STENGEL M, PREPRINT

[10] Origin of the dielectric dead layer in nanoscale capacitors [J].

Stengel, Massimiliano ;

Spaldin, Nicola A. .

NATURE, 2006, 443 (7112) :679-682

← 1 →